3sk263 no.4423-1/6 features ? enhancement type ? small noise gure ? small cross modulation speci cations absolute maximum ratings at ta=25c parameter symbol conditions ratings unit drain-to-source voltage v ds 15 v gate1-to-source voltage v g1s 8v gate2-to-source voltage v g2s 8v drain current i d 30 ma allowable power dissipation p d 200 mw channel temperature tch 125 c storage temperature tstg --55 to +125 c package dimensions unit : mm (typ) 7014a-006 90512 tkim/82599th (kt)/20696yk/63094mt (koto) ax-9847 sanyo semiconductors data sheet 3sk263 http://www.sanyosemi.com/en/network/ ordering number : en4423c 2.9 2.5 1.5 0.3 1.1 0.05 1 43 2 0.6 0.85 0.95 0.5 0.5 0.4 0.1 1 : drain 2 : source 3 : gate1 4 : gate2 sanyo : cp4 3SK263-5-TG-E n-channel silicon mosfet (dual gate) fm tuner, vhf tuner, high-frequency ampli er applications product & package information ? package : cp4 ? jeita, jedec : sc-61, sc-82ab, sot-143, sot-343 ? minimum packing quantity : 3,000 pcs./reel packing type: tg marking electrical connection rj lot no. lot no. rank tg 1 2 3 4
3sk263 no.4423-2/6 electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max drain-to-source voltage v ds v g1s =0v, v g2s =0v, i d =100 a15 v gate1-to-source cutoff voltage v g1s (off) v ds =6v, v g2s =4v, i d =100 a 0 0.7 1.3 v gate2-to-source cutoff voltage v g2s (off) v ds =6v, v g1s =3v, i d =100 a 0.1 0.9 1.6 v gate1-to-source leakage current i g1ss v g1s = 6v, v g2s =v ds =0v 50 na gate2-to-source leakage current i g2ss v g2s = 6v, v g1s =v ds =0v 50 na zero-gate voltage drain current i dsx v ds =6v, v g1s =1.5v, v g2s =4v 2.5* 24* ma forward transfer admittance | yfs | v ds =6v, i d =10ma, v g2s =4v, f=1khz 14 ms input capacitance ciss v ds =6v, f=1mhz, v g1s =0v, v g2s =4v 2.7 pf reverse transfer capacitance crss 0.015 0.03 pf power gain pg v ds =6v, i d =10ma, v g2s =4v, f=200mhz 18 21 db noise figure nf v ds =6v, i d =10ma, v g2s =4v, f=200mhz 1.1 2.2 db * : the 3sk263 is classi ed by i dsx as follows : (unit : ma) rank 4 5 6 i dsx 2.5 to 6.0 5.0 to 12.0 10.0 to 24.0 pg, nf speci ed test circult ordering information device package shipping memo 3SK263-5-TG-E cp4 3,000pcs./reel pb free ou t 50 v g2s v g1s in 50 15k 12 v ds 1000pf 47pf 1000pf 1000pf ~20pf ~20pf ~20pf l : 1mm? enamel wire 10mm? 2 t 3 4 1 t 1 2 2 t 1 2 f=200mhz
3sk263 no.4423-3/6 gate2-to-source voltage, v g2s -- v i d -- v g2s drain current, i d -- ma gate1-to-source voltage, v g1s -- v forward transfer admittance, | y fs | -- ms | y fs | -- v g1s drain-to-source voltage, v ds -- v i d -- v ds drain current, i d -- ma gate1-to-source voltage, v g1s -- v i d -- v g1s drain current, i d -- ma drain current, i d -- ma forward transfer admittance, | y fs | -- ms | y fs | -- i d ciss -- v g2s gate2-to-source voltage, v g2s -- v input capacitance, ciss -- pf ambient temperature, ta -- c allowable power dissipation, p d -- mw p d -- ta gate2-to-source voltage, v g2s -- v pg, nf -- v g2s power gain, pg -- db noise figure, nf -- db 20 16 12 8 4 0 0246810 2.4v 2.0v 2.2v 1.8v 1.6v 1.4v 1.0v 1.2v 0.8v v g2s =4.0v 5.5v v g2s =6.0v itr02874 itr02876 25 20 15 10 5 0 0 0.5 1.0 1.5 2.0 2.5 0 0.5 1.0 1.5 2.0 2.5 v ds =6v 5.0v 4.5v 4.0v 3.5v 2.5v 1.0v 1.5v 2.0v 0.5v 3.0v 25 20 15 10 5 0 02 1345 v ds =6v v g1s =2.5v 2.25v 1.75v 1.25v 0.75v 2.0v 1.5v 1.0v 20 25 15 10 5 0 itr02875 itr02877 4.5v 5.0v 5.5v 2.0v 1.5v 1.0v 2.5v 3.0v 3.5v 4.0v v ds =6v f=1khz 0 --10 10 20 30 1 0 2 3 4 5 4 012 6 3 240 200 120 160 80 40 0 0 20 40 60 80 100 120 140 pg nf itr02880 itr02881 v ds =6v v g1s : v g2s =4v i d =10ma f=200mhz 4.5v 0 2 3 5 7 20 25 5 10 15 5 010152025 1.0 0 -- 1 1 2 4 3 itr02878 5.0v 5.5v itr02879 v ds =6v v g1s : v g2s =4v i d =10ma f=1mhz v g2s =6.0v 2.0v 1.5v 1.0v 2.5v 3.0v 3.5v 4.0v v ds =6v f=1khz v g1s =0.6v v g2s =6.0v
3sk263 no.4423-4/6 embossed taping speci cation 3SK263-5-TG-E
3sk263 no.4423-5/6 outline drawing land pattern example 3SK263-5-TG-E mass (g) unit 0.013 * for reference mm unit: mm 1.8 1.9 1.2 0.8 1.0 2.4
3sk263 ps no.4423-6/6 this catalog provides information as of september, 2012. speci cations and information herein are subject to change without notice. any and all sanyo semiconductor co.,ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. the products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. if you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. if there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer ' s products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. sanyo semiconductor co.,ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein. regarding monolithic semiconductors, if you should intend to use this ic continuously under high temperature, high current, high voltage, or drastic temperature change, even if it is used within the range of absolute maximum ratings or operating conditions, there is a possibility of decrease reliability. please contact us for a confirmation. sanyo semiconductor co.,ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. it is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo semiconductor co.,ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of sanyo semiconductor co.,ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor co.,ltd. product that you intend to use. upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of sanyo semiconductor co.,ltd. or any third party. sanyo semiconductor co.,ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. note on usage : since the 3sk263 is a mosfet product, please avoid using this device in the vicinity of highly charged objects.
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